this is information on a product in full production. june 2013 docid024685 rev 1 1/9 BTW69-1200N 50 a ? 1200 v non insulated scr thyristor datasheet - production data features ? on-state rms current: 50 a ? blocking voltage: 1200 v ? gate current: 50 ma applications ? solid state relay ? battery charging system ? uninterruptible power supply ? variable speed motor drive ? industrial welding systems ? by pass ac switch description available in non insulated top3 high power package, the BTW69-1200N is suitable for applications where powe r switching and power dissipation are critical, such as by-pass switch, controlled ac rectifier bri dge, in solid state relay, battery charger, uninterruptible power supply, welding equipment and motor driver applications. based on a clip assembly technology, the BTW69-1200N offers a superior performance in surge current handling and thermal cooling capabilities. a a k g top3 non insulated a k g table 1. device summary symbol value i t(rms) 50 a v drm /v rrm 1200 v i gt 50 ma www.st.com
characteristics BTW69-1200N 2/9 docid024685 rev 1 1 characteristics table 2. absolute maximum ratings (limiting values) symbol parameter value unit i t(rms) on-state current rms (180 conduction angle) t c = 102 c 50 a it (av) average on-state current (180 conduction angle) t c = 102 c 31 a i tsm non repetitive surge peak on-state current t p = 8.3 ms t j = 25 c 763 a t p = 10 ms 700 i 2 ti 2 t value t p = 10 ms t j = 25 c 2450 a 2 s di/dt critical rate of rise of on-state current gate supply: i g = 100 ma, di g /dt = 1 a/s 100 a/s i gm peak gate current t p = 20 s t j = 125 c 8 a p g(av) average gate power dissipation t j = 125 c 1 w t stg t j storage junction temperature range operating junction temperature range - 40 to + 150 - 40 to + 125 c v gm maximum peak reverse gate voltage 5 v table 3. electrical characteristics (t j = 25 c, unless otherwise specified) symbol test conditions value unit i gt v d = 12 v, r l = 33 ? min. 8 ma max. 50 v gt max. 1.3 v v gd v d = v drm, r l = 3.3 k ? t j = 125 c min. 0.2 v i h i t = 500 ma, gate open max. 100 ma i l i g = 1.2 x i gt typ. 125 ma t gt i t = 50 a, v d = v drm , i g = 200 ma, di g /dt = 0.2 a/s typ. 2 s dv/dt v d = 67% v drm, gate open t j = 125 c min. 1000 v/s t q v d = 800 v, i tm = 50 a, v r = 75 v, t p = 100 s, di tm /dt = 30 a/s, dv d /dt = 20 v/s t j = 125 c typ. 100 s v tm i tm = 100 a, t p = 380 s t j = 25 c max. 1.6 v v t0 threshold voltage t j = 125 c max. 0.9 v r d dynamic resistance t j = 125 c max. 8.5 m ? i drm i rrm v d = v drm v r = v rrm t j = 25 c max. 10 a t j = 125 c 5 ma
docid024685 rev 1 3/9 BTW69-1200N characteristics 9 table 4. thermal resistance symbol parame ter value unit r th(j-c) junction to case (dc, typ.) 0.45 c/w r th(j-a) junction to ambient (dc) 50 c/w figure 1. maximum average power dissipation versus average on-state current figure 2. correlation between maximum average power dissipation and maximum allowable temperatures p(w) 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 40 dc i (a) t(av) 360 = 180 = 120 = 90 = 60 = 30 0 10 20 30 40 50 0 25 50 75 100 125 p (av) (w) 100.2 102.7 105.2 107.7 110.2 112.7 115.2 117.7 120.2 122.7 t c (c) r th (assembly) 0 c/w 1 c/w 2 c/w 3 c/w t a (c) = 180 figure 3. average and dc on-state current versus case temperature figure 4. average and dc on-state current versus ambient temperature i (a) t(av) 0 5 10 15 20 25 30 35 40 45 50 55 0 25 50 75 100 125 dc = 180 = 120 = 90 = 60 = 30 t (c) case 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 dc i (a) t(av) = 180 t (c) a
characteristics BTW69-1200N 4/9 docid024685 rev 1 figure 5. relative variation of thermal impedance versus pulse duration figure 6. relative vari ation of gate trigger current and gate trigger voltage versus junction temperature (typical value) k=[z /r ] th th 1.0e-02 1.0e-01 1.0e+00 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 z th(j-a) z th(j-c) t (s) p i ,v [t ] / i ,v [t =25c] gt gt j gt gt j 0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 -40 -20 0 20 40 60 80 100 125 i gt v gt t (c) j figure 7. relative vari ation of holding, and latching currents versus junction temperature (typical values) figure 8. surge peak on-state current versus number of cycles i ,i [t ] / i ,i [t =25c] hl j hl j 0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 -40 -20 0 20 40 60 80 100 125 i h i l t (c) j i (a) tsm 0 50 100 150 200 250 300 350 400 450 500 550 600 1 10 100 1000 non repetitive t j initial=25 c repetitive t c =102c t =10ms p one cycle number of cycles figure 9. non repetitive surge peak on-state current and corresponding value of i 2 t versus sinusoidal pulse figure 10. on-state characteristics (maximum values) i (a), i t (a s) tsm 2 2 10 100 1000 10000 0.01 0.10 1.00 10.00 di/dt limitation: 100 a/s i tsm i2t t j initial=25 c t (ms) p pulse with width t < 10 ms p 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 i tm (a) t j max : v to = 0.9 v r d = 8.5 m t j =25 c t j =125 c v tm (v)
docid024685 rev 1 5/9 BTW69-1200N characteristics 9 figure 11. relative variation of leakage current versus junction temperature for different values of blocking voltage (600 and 800 v) figure 12. relative variation of leakage current versus junction temperature for different values of blocking voltage (1000 and 1200 v) 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 25 50 75 100 125 i drm, i rrm [tj;v drm, v rrm ]/i drm, i rrm v drm =v rrm =800 v v drm =v rrm =600 v t j (c) 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 25 50 75 100 125 i drm, i rrm [tj;v drm, v rrm ]/i drm, i rrm v drm =v rrm =1200 v v drm =v rrm =1000 v t j (c)
package information BTW69-1200N 6/9 docid024685 rev 1 2 package information ? epoxy meets ul94,v0 ? lead-free packages ? cooling method: by conduction (c) ? recommended torque value: 0.9 to 1.2 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions a nd product status are available at: www.st.com. ecopack ? is an st trademark. figure 13. top3 dimension definitions r h k g f e d b a c jj p ?l
docid024685 rev 1 7/9 BTW69-1200N package information 9 table 5. top3 dimension values ref. dimensions millimeters inches min. max. min. max. a 4.4 4.6 0.173 0.181 b 1.45 1.55 0.057 0.061 c 14.35 15.60 0.565 0.614 d 0.5 0.7 0.020 0.028 e 2.7 2.9 0.106 0.114 f 15.8 16.5 0.622 0.650 g 20.4 21.1 0.815 0.831 h 15.1 15.5 0.594 0.610 j 5.4 5.65 0.213 0.222 k 3.4 3.65 0.134 0.144 ?l 4.08 4.17 0.161 0.164 p 1.20 1.40 0.047 0.055 r 4.60 typ. 0.181 typ.
ordering information BTW69-1200N 8/9 docid024685 rev 1 3 ordering information figure 14. ordering information scheme 4 revision history table 6. ordering information order code marking package weight base qty delivery mode BTW69-1200N btw691200n top3 4.55 g 30 tube btw 69 - 1200 n standard scr series type 69 = 50 a voltage 1200 = 1200 v package n = top3 non insulated table 7. document revision history date revision changes 14-jun-2013 1 initial release.
docid024685 rev 1 9/9 BTW69-1200N 9 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
|
